onsemi Dual 2 Type N-Channel Power MOSFET, 27 A, 40 V Enhancement, 8-Pin DFN NVMFD5C478NT1G
- RS-stocknr.:
- 178-4488
- Fabrikantnummer:
- NVMFD5C478NT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 12,08
(excl. BTW)
€ 14,62
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 25 december 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 1,208 | € 12,08 |
| 100 - 240 | € 1,042 | € 10,42 |
| 250 - 490 | € 0,904 | € 9,04 |
| 500 - 990 | € 0,794 | € 7,94 |
| 1000 + | € 0,722 | € 7,22 |
*prijsindicatie
- RS-stocknr.:
- 178-4488
- Fabrikantnummer:
- NVMFD5C478NT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.84V | |
| Maximum Power Dissipation Pd | 23W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | 175°C | |
| Typical Gate Charge Qg @ Vgs | 6.3nC | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Width | 6.1 mm | |
| Length | 5.1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.84V | ||
Maximum Power Dissipation Pd 23W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature 175°C | ||
Typical Gate Charge Qg @ Vgs 6.3nC | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Width 6.1 mm | ||
Length 5.1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- MY
Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Low on resistance
High current capability
PPAP capable
NVMFD5C478NWF - Wettable Flanks Product
Benefits
Minimal conduction losses
Robust load performance
Suitable for automotive applications
Enhanced Optical Inspection
Applications
Solenoid driver
Low side / high side driver
End Products
Automotive engine controllers
Antilock braking systems
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