Vishay 1 Type N-Channel Power MOSFET, 1.4 A, 800 V TO-220FP IRFIBE20GPBF
- RS-stocknr.:
- 180-8329
- Fabrikantnummer:
- IRFIBE20GPBF
- Fabrikant:
- Vishay
Subtotaal (1 tube van 50 eenheden)*
€ 65,35
(excl. BTW)
€ 79,05
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 15 maart 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 + | € 1,307 | € 65,35 |
*prijsindicatie
- RS-stocknr.:
- 180-8329
- Fabrikantnummer:
- IRFIBE20GPBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220FP | |
| Maximum Drain Source Resistance Rds | 6.5Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 30W | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220FP | ||
Maximum Drain Source Resistance Rds 6.5Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 30W | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay IRFIBE20G is a N-channel power MOSFET having drain to source(Vds) voltage of 800V.The gate to source voltage(VGS) is 20V. It is having TO-220 FULLPAK package. It offers drain to source resistance (RDS.) 6.5ohms at 10VGS.
Isolated package
High voltage isolation = 2.5 kVrms (t = 60 s; f = 60 Hz)
Sink to lead creepage distance = 4.8 mm