onsemi FDPF Type N-Channel MOSFET, 222 A, 100 V Enhancement, 3-Pin TO-220

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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
RS-stocknr.:
181-1861
Fabrikantnummer:
FDPF2D3N10C
Fabrikant:
onsemi
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Merk

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

222A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

FDPF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2.3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

45W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

108nC

Maximum Operating Temperature

175°C

Height

16.07mm

Width

4.9 mm

Standards/Approvals

No

Length

10.36mm

Automotive Standard

No

Land van herkomst:
CN
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Max RDS(on) = 2.3 mΩ at VGS = 10 V, ID = 222 A

Power Density & Shielded Gate

High Performance Trench Technology for Extremely Low RDS(on)

High power density with Shielded gate technology

Extremely Low Reverse Recovery Charge, Qrr

Low Vds spike internal snubber function.

Low Gate Charge, QG = 108nC (Typ.)

Low switching loss

High Power and Current Handling Capability

Low Qrr/Trr

Soft recovery performance

Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.

Motor drives and Uninterruptible Power Supplies

Micro Solar Inverter

Server

Telecom

Computing (ATX, Workstation, Adapter, Industrial Power Supplies etc.)

Motor Drive

Uninterruptible Power Supplies

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