DiodesZetex DMP Type P-Channel MOSFET, 600 mA, 20 V Enhancement, 3-Pin X1-DFN
- RS-stocknr.:
- 182-6916
- Fabrikantnummer:
- DMP21D6UFD-7
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 rol van 3000 eenheden)*
€ 129,00
(excl. BTW)
€ 156,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 06 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 - 6000 | € 0,043 | € 129,00 |
| 9000 - 12000 | € 0,041 | € 123,00 |
| 15000 + | € 0,04 | € 120,00 |
*prijsindicatie
- RS-stocknr.:
- 182-6916
- Fabrikantnummer:
- DMP21D6UFD-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | X1-DFN | |
| Series | DMP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.1V | |
| Typical Gate Charge Qg @ Vgs | 0.8nC | |
| Maximum Power Dissipation Pd | 800mW | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 1.25mm | |
| Height | 0.48mm | |
| Width | 1.25 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type X1-DFN | ||
Series DMP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.1V | ||
Typical Gate Charge Qg @ Vgs 0.8nC | ||
Maximum Power Dissipation Pd 800mW | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 1.25mm | ||
Height 0.48mm | ||
Width 1.25 mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Low On-Resistance
Very Low Gate Threshold Voltage, -1.0V Max
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free
Halogen and Antimony Free. Green Device
Applications
Power Management Functions
DC-DC Converters
Gerelateerde Links
- Diodes Inc P-Channel MOSFET 20 V, 3-Pin X1-DFN1212 DMP21D6UFD-7
- Diodes Inc N-Channel MOSFET 20 V, 3-Pin X1-DFN1212 DMN2450UFD-7
- Diodes Inc P-Channel MOSFET 20 V X1-DFN1006-3 DMP2900UFB-7B
- Diodes Inc P-Channel MOSFET 50 V, 3-Pin X1-DFN1006 DMP56D0UFB-7
- Diodes Inc DMP Plastic P-Channel MOSFET 65 V, 3-Pin X1-DFN1006 DMP68D0LFB-7B
- Diodes Inc P-Channel MOSFET 450 V, 3-Pin SOT-223 DMP45H21DHE-13
- Diodes Inc DMP65H P-Channel MOSFET 600 V, 8-Pin SOIC DMP65H13D0HSS-13
- Diodes Inc Dual N/P-Channel MOSFET 750 mA 6-Pin SOT-363 DMC2710UDWQ-7
