DiodesZetex DMP2040UVT Type P-Channel MOSFET, 5.5 A, 20 V Enhancement, 6-Pin TSOT DMP2040UVT-7
- RS-stocknr.:
- 182-7069
- Fabrikantnummer:
- DMP2040UVT-7
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 50 eenheden)*
€ 15,15
(excl. BTW)
€ 18,35
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 18 januari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 - 200 | € 0,303 | € 15,15 |
| 250 - 450 | € 0,242 | € 12,10 |
| 500 - 950 | € 0,22 | € 11,00 |
| 1000 - 1950 | € 0,195 | € 9,75 |
| 2000 + | € 0,184 | € 9,20 |
*prijsindicatie
- RS-stocknr.:
- 182-7069
- Fabrikantnummer:
- DMP2040UVT-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 5.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMP2040UVT | |
| Package Type | TSOT | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.5W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Width | 1.7 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 5.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMP2040UVT | ||
Package Type TSOT | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.5W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Width 1.7 mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free
Halogen and Antimony Free. Green Device.
Applications
DC-DC Converters
Motor Control
Power Management Functions
Analog Switch
Gerelateerde Links
- Diodes Inc P-Channel MOSFET 20 V, 6-Pin TSOT-26 DMP2040UVT-7
- Diodes Inc P-Channel MOSFET 30 V, 6-Pin TSOT-26 DMP3050LVTQ-7
- Diodes Inc DMP2067 P-Channel MOSFET 20 V, 6-Pin TSOT-26 DMP2067LVT-7
- Diodes Inc DMP3164 Dual P-Channel MOSFET 30 V, 6-Pin TSOT-26 DMP3164LVT-7
- Diodes Inc Dual N/P-Channel MOSFET 3.3 A 6-Pin TSOT-26 DMC3071LVT-7
- Diodes Inc Dual N/P-Channel MOSFET 3.4 A 6-Pin TSOT-26 DMG6602SVT-7
- Diodes Inc Dual N/P-Channel MOSFET 3.3 A 6-Pin TSOT-26 DMC2057UVT-7
- Diodes Inc Dual N/P-Channel MOSFET 4.5 A 6-Pin TSOT-26 DMG6601LVT-7
