DiodesZetex DMN Type N-Channel MOSFET, 8 A, 60 V Enhancement, 4-Pin SOT-223 DMN6069SE-13
- RS-stocknr.:
- 182-7095
- Fabrikantnummer:
- DMN6069SE-13
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 50 eenheden)*
€ 15,45
(excl. BTW)
€ 18,70
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 1.550 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 - 200 | € 0,309 | € 15,45 |
| 250 - 450 | € 0,27 | € 13,50 |
| 500 - 950 | € 0,216 | € 10,80 |
| 1000 - 1950 | € 0,181 | € 9,05 |
| 2000 + | € 0,166 | € 8,30 |
*prijsindicatie
- RS-stocknr.:
- 182-7095
- Fabrikantnummer:
- DMN6069SE-13
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 11W | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.55mm | |
| Height | 1.65mm | |
| Width | 3.55 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 11W | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.55mm | ||
Height 1.65mm | ||
Width 3.55 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Motor control
Transformer driving switch
DC-DC Converters
Power management functions
Uninterrupted power supply
Gerelateerde Links
- Diodes Inc N-Channel MOSFET 60 V, 3-Pin SOT-223 DMN6069SE-13
- Diodes Inc N-Channel MOSFET 60 V, 3-Pin SOT-223 DMN6068SE-13
- Diodes Inc N-Channel MOSFET 60 V, 3-Pin SOT-223 DMN6040SE-13
- Diodes Inc P-Channel MOSFET 60 V, 3-Pin SOT-223 DMP6023LE-13
- Diodes Inc N-Channel MOSFET 60 V, 3-Pin SOT-223 ZVN2106GTA
- Diodes Inc N-Channel MOSFET 60 V, 3-Pin SOT-223 ZXMN6A08GTA
- Diodes Inc N-Channel MOSFET 60 V, 3-Pin SOT-223 ZVN4206GTA
- Diodes Inc N-Channel MOSFET 60 V, 3-Pin SOT-223 ZXMN6A09GTA
