DiodesZetex DMN Type N-Channel MOSFET, 8 A, 60 V Enhancement, 4-Pin SOT-223 DMN6069SE-13
- RS-stocknr.:
- 182-7095
- Fabrikantnummer:
- DMN6069SE-13
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 50 eenheden)*
€ 15,45
(excl. BTW)
€ 18,70
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 1.550 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 - 200 | € 0,309 | € 15,45 |
| 250 - 450 | € 0,27 | € 13,50 |
| 500 - 950 | € 0,216 | € 10,80 |
| 1000 - 1950 | € 0,181 | € 9,05 |
| 2000 + | € 0,166 | € 8,30 |
*prijsindicatie
- RS-stocknr.:
- 182-7095
- Fabrikantnummer:
- DMN6069SE-13
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMN | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 11W | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.55mm | |
| Height | 1.65mm | |
| Width | 3.55 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMN | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 11W | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.55mm | ||
Height 1.65mm | ||
Width 3.55 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Motor control
Transformer driving switch
DC-DC Converters
Power management functions
Uninterrupted power supply
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