Diodes Inc Dual N-Channel MOSFET, 30.8 (State) A, 43.6 (Steady) A, 40 V, 8-Pin PowerDI5060 DMTH4014LPD-13

Bekijk alle MOSFETs
Informatie over voorraden is momenteel niet toegankelijk
Verpakkingsopties
RS-stocknr.:
182-7388
Fabrikantnummer:
DMTH4014LPD-13
Fabrikant:
DiodesZetex
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

DiodesZetex

Channel Type

N

Maximum Continuous Drain Current

30.8 (State) A, 43.6 (Steady) A

Maximum Drain Source Voltage

40 V

Package Type

PowerDI5060

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

25 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

42.8 W

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+175 °C

Width

4.95mm

Typical Gate Charge @ Vgs

10.2 nC @ 10V

Length

5.85mm

Height

1.05mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Automotive Standard

AEC-Q101

Land van herkomst:
CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low RDS(ON) – Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
Applications
Power Management Functions
DC-DC Converters
Backlighting

Gerelateerde Links