ROHM QS5U34 N-Channel MOSFET, 1.5 A, 20 V, 5-Pin TSMT QS5U34TR
- RS-stocknr.:
- 183-4709
- Fabrikantnummer:
- QS5U34TR
- Fabrikant:
- ROHM
Niet beschikbaar
RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 183-4709
- Fabrikantnummer:
- QS5U34TR
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.5 A | |
| Maximum Drain Source Voltage | 20 V | |
| Series | QS5U34 | |
| Package Type | TSMT | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 310 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.3V | |
| Minimum Gate Threshold Voltage | 0.3V | |
| Maximum Power Dissipation | 900 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 1.8 nC @ 4.5 V | |
| Width | 1.6mm | |
| Length | 2.9mm | |
| Height | 0.85mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.5 A | ||
Maximum Drain Source Voltage 20 V | ||
Series QS5U34 | ||
Package Type TSMT | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 310 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.3V | ||
Minimum Gate Threshold Voltage 0.3V | ||
Maximum Power Dissipation 900 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 1.8 nC @ 4.5 V | ||
Width 1.6mm | ||
Length 2.9mm | ||
Height 0.85mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
Multiple Schottky Barrier Diodes Middle Power MOSFET
Small Surface Mount Package
Pb Free
Small Surface Mount Package
Pb Free
Gerelateerde Links
- ROHM QS6M3 Dual N/P-Channel MOSFET 20 V 6-Pin TSMT QS6M3TR
- ROHM RQ7G080BG Type N-Channel MOSFET 40 V N TSMT-8
- ROHM RQ1C065UN N-Channel MOSFET 20 V, 8-Pin TSMT RQ1C065UNTR
- ROHM RQ7G080BG Type N-Channel MOSFET 40 V N TSMT-8 RQ7G080BGTCR
- ROHM N-Channel MOSFET 30 V, 6-Pin TSMT RTQ035N03TR
- ROHM N-Channel MOSFET 30 V, 3-Pin TSMT RSR025N03TL
- ROHM N-Channel MOSFET 30 V, 3-Pin TSMT RTR025N03TL
- ROHM QS5U13 N-Channel MOSFET 30 V, 5-Pin TSMT QS5U13TR
