ROHM QS5U34 N-Channel MOSFET, 1.5 A, 20 V, 5-Pin TSMT QS5U34TR
- RS-stocknr.:
- 183-4709
- Fabrikantnummer:
- QS5U34TR
- Fabrikant:
- ROHM
Niet beschikbaar
RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 183-4709
- Fabrikantnummer:
- QS5U34TR
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.5 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | TSMT | |
| Series | QS5U34 | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 310 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.3V | |
| Minimum Gate Threshold Voltage | 0.3V | |
| Maximum Power Dissipation | 900 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 2.9mm | |
| Typical Gate Charge @ Vgs | 1.8 nC @ 4.5 V | |
| Width | 1.6mm | |
| Height | 0.85mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.5 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type TSMT | ||
Series QS5U34 | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 310 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.3V | ||
Minimum Gate Threshold Voltage 0.3V | ||
Maximum Power Dissipation 900 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 10 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 2.9mm | ||
Typical Gate Charge @ Vgs 1.8 nC @ 4.5 V | ||
Width 1.6mm | ||
Height 0.85mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
Multiple Schottky Barrier Diodes Middle Power MOSFET
Small Surface Mount Package
Pb Free
Small Surface Mount Package
Pb Free
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