onsemi Single FDP083N15A 1 Type N-Channel MOSFET, 117 A, 150 V, 3-Pin TO-220
- RS-stocknr.:
- 186-7388
- Fabrikantnummer:
- FDP083N15A-F102
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 136,60
(excl. BTW)
€ 165,30
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 250 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 2,732 | € 136,60 |
| 100 - 200 | € 2,478 | € 123,90 |
| 250 - 350 | € 2,344 | € 117,20 |
| 400 - 450 | € 2,297 | € 114,85 |
| 500 + | € 2,221 | € 111,05 |
*prijsindicatie
- RS-stocknr.:
- 186-7388
- Fabrikantnummer:
- FDP083N15A-F102
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 117A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-220 | |
| Series | FDP083N15A | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.3mΩ | |
| Forward Voltage Vf | 1.25V | |
| Maximum Power Dissipation Pd | 294W | |
| Maximum Gate Source Voltage Vgs | 30 V dc | |
| Typical Gate Charge Qg @ Vgs | 64.5nC | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Length | 10.36mm | |
| Width | 4.67 mm | |
| Height | 8.78mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 117A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-220 | ||
Series FDP083N15A | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.3mΩ | ||
Forward Voltage Vf 1.25V | ||
Maximum Power Dissipation Pd 294W | ||
Maximum Gate Source Voltage Vgs 30 V dc | ||
Typical Gate Charge Qg @ Vgs 64.5nC | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Length 10.36mm | ||
Width 4.67 mm | ||
Height 8.78mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
This N-Channel MOSFET is produced using an advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
RDS(on) = 6.85mΩ ( Typ.)@ VGS = 10V, ID = 75A
Fast Switching Speed
Low Gate Charge, QG = 64.5nC ( Typ.)
High Performance Trench Technology for Extremely Low RDS(on)
High Power and Current Handling Capability
Applications
AC-DC Merchant Power Supply - Servers & Workstations
AC-DC Merchant Power Supply - Desktop PC
Uninterruptible Power Supply
Uninterruptible Power Supply
Other Data Processing
Synchronous Rectification for ATX / Server / Telecom PSU
Battery Protection Circuit
Motor Drives
Uninterruptible Power Supplies
Micro Solar Inverters
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