STMicroelectronics Type N-Channel MOSFET, 5.5 A, 600 V Enhancement, 8-Pin PowerFLAT STL10N60M6
- RS-stocknr.:
- 192-4825
- Fabrikantnummer:
- STL10N60M6
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 10,38
(excl. BTW)
€ 12,56
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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- Verzending vanaf 01 mei 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 2,076 | € 10,38 |
| 25 - 45 | € 1,948 | € 9,74 |
| 50 - 120 | € 1,85 | € 9,25 |
| 125 - 245 | € 1,748 | € 8,74 |
| 250 + | € 1,658 | € 8,29 |
*prijsindicatie
- RS-stocknr.:
- 192-4825
- Fabrikantnummer:
- STL10N60M6
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 660mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 48W | |
| Typical Gate Charge Qg @ Vgs | 8.8nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5 mm | |
| Standards/Approvals | No | |
| Length | 6mm | |
| Height | 0.95mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 660mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 48W | ||
Typical Gate Charge Qg @ Vgs 8.8nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Width 5 mm | ||
Standards/Approvals No | ||
Length 6mm | ||
Height 0.95mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance
Zener-protected
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