STMicroelectronics Type N-Channel MOSFET, 15 A, 600 V Enhancement, 3-Pin TO-220 STP26N60DM6
- RS-stocknr.:
- 192-4925
- Fabrikantnummer:
- STP26N60DM6
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 8,16
(excl. BTW)
€ 9,88
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 66 stuk(s) vanaf 02 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 4,08 | € 8,16 |
| 10 - 18 | € 3,84 | € 7,68 |
| 20 - 48 | € 3,635 | € 7,27 |
| 50 - 98 | € 3,43 | € 6,86 |
| 100 + | € 3,27 | € 6,54 |
*prijsindicatie
- RS-stocknr.:
- 192-4925
- Fabrikantnummer:
- STP26N60DM6
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 195mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.6 mm | |
| Length | 10.4mm | |
| Height | 15.75mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 195mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.6 mm | ||
Length 10.4mm | ||
Height 15.75mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
Extremely high dv/dt ruggedness
Zener-protected
Gerelateerde Links
- STMicroelectronics N-Channel MOSFET Transistor 3-Pin TO-220 STP26N60DM6
- STMicroelectronics N-Channel MOSFET Transistor 3-Pin TO-220 STP26N65DM2
- Infineon N-Channel MOSFET Transistor 3-Pin PG-TO 220 IPA600N25NM3SXKSA1
- STMicroelectronics STripFET N-Channel MOSFET 200 V, 3-Pin TO-220 STP19NF20
- STMicroelectronics STripFET N-Channel MOSFET 100 V, 3-Pin TO-220 STP14NF10
- STMicroelectronics N-Channel MOSFET Transistor 600 V, 5-Pin PowerFLAT 8 x 8 HV STL26N60DM6
- Infineon N-Channel MOSFET Transistor 600 V TO-220 IPP60R065S7XKSA1
- Infineon N-Channel MOSFET Transistor 600 V TO-220 IPP60R040S7XKSA1