Fabrikantnummer

STMicroelectronics Single 1 N-Channel, 25 A, 650 V Enhancement, 3-Pin TO-220 STP26N65DM2

RS-stocknr.:: 192-4952
Fabrikantnummer:: STP26N65DM2
Fabrikant:: STMicroelectronics

STMicroelectronics Single 1 N-Channel, 25 A, 650 V Enhancement, 3-Pin TO-220 STP26N65DM2

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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.

RS-stocknr.:: 192-4952
Fabrikantnummer:: STP26N65DM2
Fabrikant:: STMicroelectronics

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	STMicroelectronics
	Transistor Configuration	Single
	Number of Elements per Chip	1
	Channel Type	N
	Maximum Continuous Drain Current (Id)	25 A
	Maximum Drain Source Voltage (Vds)	650 V
	Channel Mode	Enhancement
	Pin Count	3
	Package Type	TO-220
	Automotive Standard	No
	Forward Voltage (Vf)	1.6 V
	Height	15.75 mm
	Length	10.4 mm
	Maximum Drain Source Resistance (Rds)	190 Ω
	Maximum Gate Source Voltage (Vgs)	25 V
	Maximum Operating Temperature	150 °C
	Maximum Power Dissipation (Pd)	160 W
	Minimum Operating Temperature	-55 °C
	Mount Type	Surface, Through Hole, Through Hole
	Standards/Approvals	FCC Part 68, RoHS, TIA-1096-A
	Typical Gate Charge (Qg) @ Vgs	35.5 nC
	Width	4.6 mm

	Alles selecteren
	Merk STMicroelectronics
	Transistor Configuration Single
	Number of Elements per Chip 1
	Channel Type N
	Maximum Continuous Drain Current (Id) 25 A
	Maximum Drain Source Voltage (Vds) 650 V
	Channel Mode Enhancement
	Pin Count 3
	Package Type TO-220
	Automotive Standard No
	Forward Voltage (Vf) 1.6 V
	Height 15.75 mm
	Length 10.4 mm
	Maximum Drain Source Resistance (Rds) 190 Ω
	Maximum Gate Source Voltage (Vgs) 25 V
	Maximum Operating Temperature 150 °C
	Maximum Power Dissipation (Pd) 160 W
	Minimum Operating Temperature -55 °C
	Mount Type Surface, Through Hole, Through Hole
	Standards/Approvals FCC Part 68, RoHS, TIA-1096-A
	Typical Gate Charge (Qg) @ Vgs 35.5 nC
	Width 4.6 mm

Land van herkomst:: CN

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and Ideal for bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

Extremely high dv/dt ruggedness

Zener-protected

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