onsemi Type N-Channel MOSFET, 313 A, 40 V Enhancement, 8-Pin DFN NTMFSC0D9N04CL
- RS-stocknr.:
- 195-2664
- Fabrikantnummer:
- NTMFSC0D9N04CL
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 13,60
(excl. BTW)
€ 16,50
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 02 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 1,36 | € 13,60 |
| 100 - 240 | € 1,172 | € 11,72 |
| 250 + | € 1,016 | € 10,16 |
*prijsindicatie
- RS-stocknr.:
- 195-2664
- Fabrikantnummer:
- NTMFSC0D9N04CL
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 313A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 850μΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 143nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 167W | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.95mm | |
| Standards/Approvals | No | |
| Width | 5 mm | |
| Length | 5.9mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 313A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 850μΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 143nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 167W | ||
Maximum Operating Temperature 150°C | ||
Height 0.95mm | ||
Standards/Approvals No | ||
Width 5 mm | ||
Length 5.9mm | ||
Automotive Standard No | ||
This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Top and bottom sided exposed in standard 5x6mm pin-out
Improved thermal dissipation through top and bottom side of the package
Ultra low RDS-on
Reduced conduction loss
Reduced capacitances and package inductance
Reduced switching loss
Application
Synchronous Rectifier in AC-DC and DC-DC power supplies
Motor Switch
Load switch
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