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Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	337A
	Maximum Drain Source Voltage Vds	80V
	Package Type	DFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.1mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	147nC
	Maximum Power Dissipation Pd	300W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	8 mm
	Length	8.1mm
	Height	1.15mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 337A
	Maximum Drain Source Voltage Vds 80V
	Package Type DFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.1mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 147nC
	Maximum Power Dissipation Pd 300W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 8 mm
	Length 8.1mm
	Height 1.15mm
	Automotive Standard AEC-Q101

Datasheet NVMTS1D2N08H

Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank capable for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (8x8 mm)

Compact Design

Low RDS(on)

Minimize Conduction Losses

Low QG and Capacitance

Minimize Driver Losses

Wettable Flank Option

Enhanced Optical Inspection

PPAP Capable

Application

Reverser Battery protection

Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)

onsemi Type N-Channel MOSFET, 337 A, 80 V Enhancement, 8-Pin DFN NVMTS1D2N08H

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