Vishay SQJA36EP Type N-Channel MOSFET, 350 A, 40 V Enhancement, 4-Pin SO-8
- RS-stocknr.:
- 200-6823
- Fabrikantnummer:
- SQJA36EP-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 40,175
(excl. BTW)
€ 48,60
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 27 juli 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 1,607 | € 40,18 |
| 50 - 100 | € 1,366 | € 34,15 |
| 125 - 225 | € 1,238 | € 30,95 |
| 250 - 600 | € 0,996 | € 24,90 |
| 625 + | € 0,932 | € 23,30 |
*prijsindicatie
- RS-stocknr.:
- 200-6823
- Fabrikantnummer:
- SQJA36EP-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 350A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | SQJA36EP | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.24mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 107nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 6.25mm | |
| Length | 4.2mm | |
| Standards/Approvals | No | |
| Width | 1.1 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 350A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series SQJA36EP | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.24mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 107nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 6.25mm | ||
Length 4.2mm | ||
Standards/Approvals No | ||
Width 1.1 mm | ||
Automotive Standard AEC-Q101 | ||
The Vishay SQJA36EP-T1_GE3 is a automotive N-channel 40V (D-S) 175°C MOSFET.
TrenchFET Gen IV power MOSFET
AEC-Q101 qualified
100 % Rg and UIS tested
Qgd/Qgs ratio < 1 optimizes switching
characteristics
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