STMicroelectronics Type N-Channel SiC Power Module, 12 A, 1200 V Enhancement, 3-Pin Hip-247 SCT10N120H
- RS-stocknr.:
- 204-3950P
- Fabrikantnummer:
- SCT10N120H
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal 50 eenheden (geleverd op een doorlopende strip)*
€ 530,00
(excl. BTW)
€ 641,50
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk |
|---|---|
| 50 - 98 | € 10,60 |
| 100 - 248 | € 8,84 |
| 250 - 498 | € 8,60 |
| 500 + | € 8,005 |
*prijsindicatie
- RS-stocknr.:
- 204-3950P
- Fabrikantnummer:
- SCT10N120H
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | SiC Power Module | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.52Ω | |
| Channel Mode | Enhancement | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type SiC Power Module | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.52Ω | ||
Channel Mode Enhancement | ||
- Land van herkomst:
- CN
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Very tight variation of on-resistance vs. temperature
Very high operating junction temperature capability (TJ = 200°C)
Very fast and robust intrinsic body diode
Low capacitance