DiodesZetex DMN10 N-Channel MOSFET, 3.7 A, 100 V Enhancement, 8-Pin PowerDI3333 DMN10H170SFGQ-7
- RS-stocknr.:
- 206-0073
- Fabrikantnummer:
- DMN10H170SFGQ-7
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 25 eenheden)*
€ 18,60
(excl. BTW)
€ 22,50
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 2.150 stuk(s) vanaf 16 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,744 | € 18,60 |
| 50 - 75 | € 0,729 | € 18,23 |
| 100 - 225 | € 0,638 | € 15,95 |
| 250 - 975 | € 0,62 | € 15,50 |
| 1000 + | € 0,605 | € 15,13 |
*prijsindicatie
- RS-stocknr.:
- 206-0073
- Fabrikantnummer:
- DMN10H170SFGQ-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 3.7A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | DMN10 | |
| Package Type | PowerDI3333 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 133mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 26.7nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.25mm | |
| Height | 0.75mm | |
| Standards/Approvals | No | |
| Width | 3.25mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 3.7A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series DMN10 | ||
Package Type PowerDI3333 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 133mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 26.7nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Length 3.25mm | ||
Height 0.75mm | ||
Standards/Approvals No | ||
Width 3.25mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The DiodesZetex 100V complementary pair enhancement mode MOSFET is designed to meet the stringent requirements of automotive application. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in motor control and power management function.
Low RDS(ON) – ensures on state losses are minimized
Small form factor thermally efficient package
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