STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 4-Pin Hip-247
- RS-stocknr.:
- 213-3945P
- Fabrikantnummer:
- SCTWA90N65G2V-4
- Fabrikant:
- STMicroelectronics
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€ 256,90
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€ 310,80
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- Verzending vanaf 01 april 2027
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Aantal stuks | Per stuk |
|---|---|
| 10 - 24 | € 25,69 |
| 25 + | € 25,13 |
*prijsindicatie
- RS-stocknr.:
- 213-3945P
- Fabrikantnummer:
- SCTWA90N65G2V-4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 119A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SCTWA90N65G2V-4 | |
| Package Type | Hip-247 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 157nC | |
| Maximum Power Dissipation Pd | 656W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2.5V | |
| Maximum Operating Temperature | 200°C | |
| Length | 15.9mm | |
| Height | 5.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 119A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SCTWA90N65G2V-4 | ||
Package Type Hip-247 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 157nC | ||
Maximum Power Dissipation Pd 656W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2.5V | ||
Maximum Operating Temperature 200°C | ||
Length 15.9mm | ||
Height 5.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics SCTWA90N65G2V-4 silicon carbide Power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
High speed switching performance
Very high operating junction temperature capability
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency