DiodesZetex DMTH10H2M5STLW Type N-Channel MOSFET, 248 A, 100 V Enhancement, 8-Pin PowerDI1012
- RS-stocknr.:
- 213-9225
- Fabrikantnummer:
- DMTH10H2M5STLW-13
- Fabrikant:
- DiodesZetex
Subtotaal (1 rol van 1500 eenheden)*
€ 4.021,50
(excl. BTW)
€ 4.866,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 1.500 stuk(s) vanaf 19 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1500 + | € 2,681 | € 4.021,50 |
*prijsindicatie
- RS-stocknr.:
- 213-9225
- Fabrikantnummer:
- DMTH10H2M5STLW-13
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 248A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerDI1012 | |
| Series | DMTH10H2M5STLW | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 124.4nC | |
| Maximum Power Dissipation Pd | 230.8W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 11.68 mm | |
| Length | 9.9mm | |
| Height | 2.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101, AEC-Q200, AEC-Q100 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 248A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerDI1012 | ||
Series DMTH10H2M5STLW | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 124.4nC | ||
Maximum Power Dissipation Pd 230.8W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 11.68 mm | ||
Length 9.9mm | ||
Height 2.3mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101, AEC-Q200, AEC-Q100 | ||
The DiodesZetex DMTH10H2M5STLW series MOSFET is designed to minimize the on-state resistance, maintain superior switching performance which makes it ideal for high efficiency power management applications.
High conversion efficiency
Wet table flank for improved optical inspection
Gerelateerde Links
- DiodesZetex DMTH10H2M5STLW Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerDI1012 DMTH10H2M5STLW-13
- DiodesZetex DMTH10H2M5STLWQ Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerDI1012
- DiodesZetex DMTH10H2M5STLWQ Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerDI1012 DMTH10H2M5STLWQ-13
- DiodesZetex Type N-Channel MOSFET 12 V Enhancement, 8-Pin PowerDI1012-8
- DiodesZetex Type N-Channel MOSFET 12 V Enhancement, 8-Pin PowerDI1012-8 DMTH4001STLWQ-13
- DiodesZetex Type N-Channel MOSFET 12 V, 8-Pin PowerDI1012-8
- DiodesZetex Type N-Channel MOSFET 12 V, 8-Pin PowerDI1012-8 DMTH4001STLW-13
- DiodesZetex Type N-Channel MOSFET 12 V Enhancement