Infineon OptiMOS Type N-Channel MOSFET, 195 A, 40 V, 8-Pin SuperSO BSC014N04LSIATMA1
- RS-stocknr.:
- 214-4319
- Fabrikantnummer:
- BSC014N04LSIATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 9,78
(excl. BTW)
€ 11,835
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 3.925 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 1,956 | € 9,78 |
| 25 - 45 | € 1,644 | € 8,22 |
| 50 - 120 | € 1,544 | € 7,72 |
| 125 - 245 | € 1,428 | € 7,14 |
| 250 + | € 1,332 | € 6,66 |
*prijsindicatie
- RS-stocknr.:
- 214-4319
- Fabrikantnummer:
- BSC014N04LSIATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Forward Voltage Vf | 0.7V | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.1 mm | |
| Standards/Approvals | No | |
| Length | 5.35mm | |
| Height | 1.2mm | |
| Distrelec Product Id | 304-39-396 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Forward Voltage Vf 0.7V | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Operating Temperature 150°C | ||
Width 6.1 mm | ||
Standards/Approvals No | ||
Length 5.35mm | ||
Height 1.2mm | ||
Distrelec Product Id 304-39-396 | ||
Automotive Standard No | ||
This Infineon OptiMOS Power MOSFET is optimized for synchronous rectification and has higher solder joint reliability due to enlarged source interconnection.
It is Halogen-free according to IEC61249-2-21
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