Infineon OptiMOS 2 Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 6-Pin SOT-363
- RS-stocknr.:
- 214-4331
- Fabrikantnummer:
- BSD214SNH6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 rol van 3000 eenheden)*
€ 198,00
(excl. BTW)
€ 240,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 6.000 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 - 3000 | € 0,066 | € 198,00 |
| 6000 - 12000 | € 0,062 | € 186,00 |
| 15000 + | € 0,06 | € 180,00 |
*prijsindicatie
- RS-stocknr.:
- 214-4331
- Fabrikantnummer:
- BSD214SNH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-363 | |
| Series | OptiMOS 2 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.02mm | |
| Width | 1.35 mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-363 | ||
Series OptiMOS 2 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 2.02mm | ||
Width 1.35 mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS™2 Small-Signal-Transistor are Qualified according to AEC Q101.
N-channel
Enhancement mode
Super Logic level (2.5V rated)
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