Infineon OptiMOS Type N-Channel MOSFET, 180 A, 100 V N, 7-Pin TO-263

RS-stocknr.:: 214-4363
Fabrikantnummer:: IPB017N10N5LFATMA1
Fabrikant:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 180 A, 100 V N, 7-Pin TO-263

Subtotaal (1 rol van 1000 eenheden)*

€ 4.015,00

(excl. BTW)

€ 4.858,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Op voorraad

Plus verzending 1.000 stuk(s) vanaf 29 december 2025

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Aantal stuks	Per stuk	Per rol*
1000 +	€ 4,015	€ 4.015,00

*prijsindicatie

RS-stocknr.:: 214-4363
Fabrikantnummer:: IPB017N10N5LFATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	100V
	Series	OptiMOS
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	1.7mΩ
	Channel Mode	N
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	195nC
	Maximum Power Dissipation Pd	313W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	10.31mm
	Height	4.57mm
	Width	9.45 mm
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 100V
	Series OptiMOS
	Package Type TO-263
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 1.7mΩ
	Channel Mode N
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 195nC
	Maximum Power Dissipation Pd 313W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 10.31mm
	Height 4.57mm
	Width 9.45 mm
	Standards/Approvals No
	Automotive Standard No

IPB017N10N5LFATMA1 Datasheet

Combining a low RDS(on) with a wide safe operating area (SOA)

OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.

Summary of Features

•Combination of low R DS(on) and wide safe operating area (SOA)

•High max. pulse current

•High continuous pulse current

Benefits

•Rugged linear mode operation

•Low conduction losses

•Higher in-rush current enabled for faster start-up and shorter down time

Potential Applications

•Telecom

•Battery management