Infineon SIPMOS Type P-Channel MOSFET, 620 mA, 60 V Enhancement, 3-Pin SC-59

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€ 522,00

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€ 633,00

(incl. BTW)

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3000 - 3000€ 0,174€ 522,00
6000 - 6000€ 0,166€ 498,00
9000 +€ 0,155€ 465,00

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RS-stocknr.:
215-2468
Fabrikantnummer:
BSR315PH6327XTSA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

620mA

Maximum Drain Source Voltage Vds

60V

Package Type

SC-59

Series

SIPMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

800mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

0.5W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

6nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon SIPMOS® Small-Signal-Transistor P-channel enhancement mode Field-Effect Transistor (FET), -20V maximum drain source voltage with SOT-23 package type. The Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. The BSS84P is a p-channel enhancement mode MOSFET in a small surface mount package with superior switching performance. This product is particularly suited for low-voltage, low-current applications.

Enhancement mode

Logic level

Avalanche rated

Fast switching

Dv/dt rated

Pb-free lead-plating

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