Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 55 A, 30 V Enhancement, 8-Pin PDFN56 TSM080N03EPQ56
- RS-stocknr.:
- 216-9672
- Fabrikantnummer:
- TSM080N03EPQ56
- Fabrikant:
- Taiwan Semiconductor
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 50 eenheden)*
€ 54,65
(excl. BTW)
€ 66,15
(incl. BTW)
Voeg 100 eenheden toe voor gratis bezorging
Wordt opgeheven
- Laatste 6.600 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 - 50 | € 1,093 | € 54,65 |
| 100 - 200 | € 0,982 | € 49,10 |
| 250 - 450 | € 0,963 | € 48,15 |
| 500 - 950 | € 0,894 | € 44,70 |
| 1000 + | € 0,876 | € 43,80 |
*prijsindicatie
- RS-stocknr.:
- 216-9672
- Fabrikantnummer:
- TSM080N03EPQ56
- Fabrikant:
- Taiwan Semiconductor
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Taiwan Semiconductor | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 54W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.1nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 155°C | |
| Length | 6mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | |
| Height | 1mm | |
| Width | 5 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Taiwan Semiconductor | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 54W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.1nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 155°C | ||
Length 6mm | ||
Standards/Approvals IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | ||
Height 1mm | ||
Width 5 mm | ||
Automotive Standard No | ||
not founs
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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