Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 73 A, 30 V Enhancement, 8-Pin PDFN56
- RS-stocknr.:
- 216-9673
- Fabrikantnummer:
- TSM080N03PQ56
- Fabrikant:
- Taiwan Semiconductor
Subtotaal (1 rol van 2500 eenheden)*
€ 1.035,00
(excl. BTW)
€ 1.252,50
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Wordt opgeheven
- Laatste 2.500 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 0,414 | € 1.035,00 |
*prijsindicatie
- RS-stocknr.:
- 216-9673
- Fabrikantnummer:
- TSM080N03PQ56
- Fabrikant:
- Taiwan Semiconductor
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Taiwan Semiconductor | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 73A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 14.4nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Operating Temperature | 155°C | |
| Width | 5 mm | |
| Length | 6mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | |
| Height | 1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Taiwan Semiconductor | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 73A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 14.4nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Operating Temperature 155°C | ||
Width 5 mm | ||
Length 6mm | ||
Standards/Approvals IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | ||
Height 1mm | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
Gerelateerde Links
- Taiwan Semi TSM025 Silicon MOSFET 30 V, 8-Pin PDFN56 TSM080N03PQ56
- Taiwan Semi TSM025 Silicon MOSFET 30 V, 8-Pin PDFN56 TSM055N03EPQ56
- Taiwan Semi TSM025 Silicon MOSFET 30 V, 8-Pin PDFN56 TSM055N03PQ56
- Taiwan Semi TSM025 Silicon MOSFET 30 V, 8-Pin PDFN56 TSM080N03EPQ56
- Taiwan Semi TSM025 Silicon MOSFET 30 V, 8-Pin PDFN56 TSM036N03PQ56
- Taiwan Semi TSM025 Silicon MOSFET 60 V, 8-Pin PDFN56 TSM250NB06DCR
- Taiwan Semi TSM025 Silicon MOSFET 40 V, 8-Pin PDFN56 TSM033NB04CR
- Taiwan Semi TSM025 Silicon MOSFET 40 V, 8-Pin PDFN56 TSM110NB04CR