Infineon CoolMOS Type N-Channel MOSFET, 9.9 A, 600 V P, 3-Pin TO-220

Bulkkorting beschikbaar

Subtotaal (1 tube van 50 eenheden)*

€ 44,70

(excl. BTW)

€ 54,10

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks
Per stuk
Per tube*
50 - 50€ 0,894€ 44,70
100 - 200€ 0,679€ 33,95
250 - 450€ 0,635€ 31,75
500 - 1200€ 0,59€ 29,50
1250 +€ 0,545€ 27,25

*prijsindicatie

RS-stocknr.:
217-2496
Fabrikantnummer:
IPAN60R650CEXKSA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9.9A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

650mΩ

Channel Mode

P

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

82W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

20.5nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

4.8 mm

Height

29.87mm

Length

16.1mm

Automotive Standard

No

The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.

Narrow margins between typical and max R DS(on)Reduced energy stored in output capacitance (E oss)

Good body diode ruggedness and reduced reverse recovery charge (Q rr)

Optimized integrated R g

Gerelateerde Links