Infineon HEXFET Type N-Channel MOSFET, 44 A, 30 V Enhancement, 8-Pin PQFN IRFH8334TRPBF
- RS-stocknr.:
- 217-2615
- Fabrikantnummer:
- IRFH8334TRPBF
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 50 eenheden)*
€ 12,30
(excl. BTW)
€ 14,90
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 3.150 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 + | € 0,246 | € 12,30 |
*prijsindicatie
- RS-stocknr.:
- 217-2615
- Fabrikantnummer:
- IRFH8334TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 3.2W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.1nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.98 mm | |
| Standards/Approvals | RoHS | |
| Height | 1.17mm | |
| Length | 6.02mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 3.2W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.1nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 4.98 mm | ||
Standards/Approvals RoHS | ||
Height 1.17mm | ||
Length 6.02mm | ||
Automotive Standard No | ||
The Infineon 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Optimized for 5V gate-drive voltage (called Logic level)
Industry standard surface-mount power package
Gerelateerde Links
- Infineon HEXFET N-Channel MOSFET 30 V, 8-Pin PQFN 5 x 6 IRFH8334TRPBF
- Infineon HEXFET N-Channel MOSFET 150 V, 8-Pin PQFN 5 x 6 IRFH5015TRPBF
- Infineon HEXFET N-Channel MOSFET 30 V PQFN IRFH8303TRPBF
- Infineon HEXFET N-Channel MOSFET 30 V PQFN IRFH5301TRPBF
- Infineon HEXFET N-Channel MOSFET 150 V PQFN IRFH5215TRPBF
- Infineon HEXFET N-Channel MOSFET 40 V PQFN IRFH7084TRPBF
- Infineon HEXFET N-Channel MOSFET 20 V PQFN IRLHM620TRPBF
- Infineon HEXFET N-Channel MOSFET 100 V PQFN IRFH5053TRPBF
