Infineon HEXFET Type N-Channel MOSFET, 45 A, 250 V, 3-Pin TO-263 IRFS4229TRLPBF
- RS-stocknr.:
- 217-2634
- Fabrikantnummer:
- IRFS4229TRLPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 15,53
(excl. BTW)
€ 18,79
(incl. BTW)
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- Plus verzending 2.605 stuk(s) vanaf 16 februari 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 3,106 | € 15,53 |
| 25 - 45 | € 2,734 | € 13,67 |
| 50 - 120 | € 2,578 | € 12,89 |
| 125 - 245 | € 2,392 | € 11,96 |
| 250 + | € 2,206 | € 11,03 |
*prijsindicatie
- RS-stocknr.:
- 217-2634
- Fabrikantnummer:
- IRFS4229TRLPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 48mΩ | |
| Maximum Power Dissipation Pd | 330W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Standards/Approvals | EIA 418 | |
| Width | 4.83 mm | |
| Height | 9.65mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 48mΩ | ||
Maximum Power Dissipation Pd 330W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Standards/Approvals EIA 418 | ||
Width 4.83 mm | ||
Height 9.65mm | ||
Automotive Standard No | ||
The Infineon HEXFET® Power MOSFET is specifically designed for Sustain ; Energy Recovery & Pass switch applications in plasma Display panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low E pulse rating.
Advanced Process Technology
Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for Reliable Operation
Short Fall & Rise Times for Fast Switching
175°C Operating Junction Temperature for Improved Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
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