Infineon HEXFET Type N-Channel MOSFET, 45 A, 250 V TO-263 IRFS4229TRLPBF
- RS-stocknr.:
- 217-2634
- Fabrikantnummer:
- IRFS4229TRLPBF
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 15,53
(excl. BTW)
€ 18,79
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 2.610 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 3,106 | € 15,53 |
| 25 - 45 | € 2,734 | € 13,67 |
| 50 - 120 | € 2,578 | € 12,89 |
| 125 - 245 | € 2,392 | € 11,96 |
| 250 + | € 2,206 | € 11,03 |
*prijsindicatie
- RS-stocknr.:
- 217-2634
- Fabrikantnummer:
- IRFS4229TRLPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 48mΩ | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 330W | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.65mm | |
| Length | 10.67mm | |
| Width | 4.83 mm | |
| Standards/Approvals | EIA 418 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 48mΩ | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 330W | ||
Maximum Operating Temperature 175°C | ||
Height 9.65mm | ||
Length 10.67mm | ||
Width 4.83 mm | ||
Standards/Approvals EIA 418 | ||
Automotive Standard No | ||
The Infineon HEXFET® Power MOSFET is specifically designed for Sustain ; Energy Recovery & Pass switch applications in plasma Display panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low E pulse rating.
Advanced Process Technology
Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for Reliable Operation
Short Fall & Rise Times for Fast Switching
175°C Operating Junction Temperature for Improved Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
Gerelateerde Links
- Infineon HEXFET N-Channel MOSFET 250 V, 3-Pin D2PAK IRFS4229TRLPBF
- Infineon HEXFET N-Channel MOSFET 40 V, 3-Pin D2PAK IRFS7437TRLPBF
- Infineon HEXFET N-Channel MOSFET 40 V, 3-Pin D2PAK AUIRFS8407TRL
- Infineon HEXFET N-Channel MOSFET 60 V D2PAK IRFS3006TRLPBF
- Infineon HEXFET N-Channel MOSFET 20 V D2PAK AUIRFZ24NSTRL
- Infineon HEXFET N-Channel MOSFET 200 V D2PAK IRFS4620TRLPBF
- Infineon HEXFET N-Channel MOSFET 20 V D2PAK AUIRFS4127TRL
- Infineon HEXFET N-Channel MOSFET 75 V D2PAK AUIRFR2407TRL