Infineon 600V CoolMOS C7 Type N-Channel MOSFET, 109 A, 600 V, 3-Pin TO-247
- RS-stocknr.:
- 218-3083
- Fabrikantnummer:
- IPW60R017C7XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 30 eenheden)*
€ 298,41
(excl. BTW)
€ 361,08
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 18 maart 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 30 | € 9,947 | € 298,41 |
| 60 + | € 9,698 | € 290,94 |
*prijsindicatie
- RS-stocknr.:
- 218-3083
- Fabrikantnummer:
- IPW60R017C7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 109A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | 600V CoolMOS C7 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 240nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 446W | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.1mm | |
| Width | 5.21 mm | |
| Length | 16.13mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 109A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series 600V CoolMOS C7 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 240nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 446W | ||
Maximum Operating Temperature 150°C | ||
Height 21.1mm | ||
Width 5.21 mm | ||
Length 16.13mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ series N-channel power MOSFET. The CoolMOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
Suitable for hard and soft switching (PFC and high performance LLC)
Increased MOSFET dv/dt ruggedness to 120V/ns
Increased switching frequency
Gerelateerde Links
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