Infineon 600V CoolMOS C7 N-Channel MOSFET, 109 A, 600 V, 3-Pin TO-247 IPW60R017C7XKSA1
- RS-stocknr.:
- 218-3083
- Fabrikantnummer:
- IPW60R017C7XKSA1
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 218-3083
- Fabrikantnummer:
- IPW60R017C7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 109A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | 600V CoolMOS C7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Maximum Power Dissipation Pd | 446W | |
| Typical Gate Charge Qg @ Vgs | 240nC | |
| Forward Voltage Vf | 900mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.21mm | |
| Length | 16.13mm | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 109A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series 600V CoolMOS C7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Maximum Power Dissipation Pd 446W | ||
Typical Gate Charge Qg @ Vgs 240nC | ||
Forward Voltage Vf 900mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.21mm | ||
Length 16.13mm | ||
Height 21.1mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ series N-channel power MOSFET. The CoolMOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
Suitable for hard and soft switching (PFC and high performance LLC)
Increased MOSFET dv/dt ruggedness to 120V/ns
Increased switching frequency
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