Infineon CoolMOS P7 Type N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin TO-220 IPA95R1K2P7XKSA1

Bulkkorting beschikbaar

Subtotaal (1 verpakking van 10 eenheden)*

€ 10,46

(excl. BTW)

€ 12,66

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • 140 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per verpakking*
10 - 40€ 1,046€ 10,46
50 - 90€ 0,995€ 9,95
100 - 240€ 0,952€ 9,52
250 - 490€ 0,91€ 9,10
500 +€ 0,848€ 8,48

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
219-5991
Fabrikantnummer:
IPA95R1K2P7XKSA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

950V

Package Type

TO-220

Series

CoolMOS P7

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.

Best-in-class VGS(th) of 3V and smallest VGS(th) variation of ±0.5V

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Gerelateerde Links