Infineon OptiMOS 5 Type N-Channel MOSFET & Diode, 205 A, 40 V Enhancement, 8-Pin TDSON

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€ 3.295,00

(excl. BTW)

€ 3.985,00

(incl. BTW)

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  • Verzending vanaf 06 juli 2026
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5000 +€ 0,659€ 3.295,00

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RS-stocknr.:
220-7349
Fabrikantnummer:
BSC014N04LSTATMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

205A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS 5

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

61nC

Maximum Power Dissipation Pd

115W

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

5.35mm

Width

6.1 mm

Height

1.2mm

Automotive Standard

No

The Infineon OptiMOS 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness. Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. Furthermore, 20% improvement in the safe operating area (SOA) is achieved. This new package feature is the perfect fit for applications such as telecom, motor drives and server.

Low RDS(on)

Optimized for synchronous rectification

Enhanced 175°C capability in SuperSO8

Longer life time

Highest efficiency and power density

Highest system reliability

Thermal robustness

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