Infineon CoolMOS C7 Type N-Channel MOSFET & Diode, 145 A, 700 V Enhancement, 3-Pin TO-247 IPW65R065C7XKSA1
- RS-stocknr.:
- 220-7459
- Fabrikantnummer:
- IPW65R065C7XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 14,58
(excl. BTW)
€ 17,64
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 212 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 7,29 | € 14,58 |
| 10 - 18 | € 6,56 | € 13,12 |
| 20 - 48 | € 6,125 | € 12,25 |
| 50 - 98 | € 5,685 | € 11,37 |
| 100 + | € 5,315 | € 10,63 |
*prijsindicatie
- RS-stocknr.:
- 220-7459
- Fabrikantnummer:
- IPW65R065C7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 145A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-247 | |
| Series | CoolMOS C7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 171W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Minimum Operating Temperature | -55°C | |
| Height | 21.1mm | |
| Width | 5.21 mm | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 145A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-247 | ||
Series CoolMOS C7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 171W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Minimum Operating Temperature -55°C | ||
Height 21.1mm | ||
Width 5.21 mm | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon Cool MOS C7 super junction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
650V voltage
Revolutionary best-in-class R DS(on)/package
Reduced energy stored in output capacitance (Eoss)
Lower gate charge Qg
Space saving through use of smaller packages or reduction of parts
Improved safety margin and suitable for both SMPS and solar inverter applications
Lowest conduction losses/package
Low switching losses
Better light load efficiency
Increasing power density
Outstanding Cool MOS™ quality
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