Infineon CoolMOS Type N-Channel MOSFET & Diode, 99.6 A, 650 V Enhancement, 3-Pin TO-247 IPW65R110CFDAFKSA1

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€ 11,75

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€ 14,218

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Verpakkingsopties
RS-stocknr.:
220-7462
Fabrikantnummer:
IPW65R110CFDAFKSA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

99.6A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

277.8W

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

118nC

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

21.1mm

Length

16.13mm

Width

5.21 mm

Automotive Standard

No

The Infineon 650V Cool MOS CFDA Super junction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage Cool MOS power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V Cool MOS CFDA series provides also an integrated fast body diode.

First 650V automotive qualified technology with integrated fast body diode on the market

Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt

Low gate charge value Q g

Low Q rr at repetitive commutation on body diode & low Q oss

Reduced turn on and turn of delay times

Increased safety margin due to higher breakdown voltage

Reduced EMI appearance and easy to design in

Better light load efficiency

Lower switching losses

Higher switching frequency and/or higher duty cycle possible

High quality and reliability

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