onsemi NVTFS Type N-Channel MOSFET, 28.3 A, 30 V Enhancement, 8-Pin WDFN NVTFS4C02NTAG
- RS-stocknr.:
- 221-6760
- Fabrikantnummer:
- NVTFS4C02NTAG
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 16,07
(excl. BTW)
€ 19,44
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Laatste 1.430 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 1,607 | € 16,07 |
| 100 - 240 | € 1,385 | € 13,85 |
| 250 + | € 1,201 | € 12,01 |
*prijsindicatie
- RS-stocknr.:
- 221-6760
- Fabrikantnummer:
- NVTFS4C02NTAG
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 28.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | NVTFS | |
| Package Type | WDFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 107W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 0.8 mm | |
| Length | 3.15mm | |
| Height | 3.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 28.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series NVTFS | ||
Package Type WDFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 107W | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Operating Temperature 175°C | ||
Width 0.8 mm | ||
Length 3.15mm | ||
Height 3.15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor Automotive power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. The wettable flank option available for enhanced optical inspection. It used AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Low RDS(on) to minimize conduction losses
Low capacitance to minimize driver losses
Gerelateerde Links
- onsemi NVTFS N-Channel MOSFET 30 V, 8-Pin WDFN NVTFS4C02NTAG
- onsemi N-Channel MOSFET 30 V, 8-Pin WDFN NVTFS4C02NWFTAG
- onsemi Dual N-Channel MOSFET 30 V, 6-Pin WDFN NTLJD4116NT1G
- onsemi NTTFS4C02N N-Channel MOSFET 30 V, 8-Pin WDFN NTTFS4C02NTAG
- onsemi Dual N-Channel MOSFET 30 V, 6-Pin WDFN FDMA2002NZ
- onsemi N-Channel MOSFET 80 V, 8-Pin WDFN NVTFS6H888NTAG
- onsemi N-Channel MOSFET 100 V, 8-Pin WDFN NVTFS010N10MCLTAG
- onsemi N-Channel MOSFET 40 V, 8-Pin WDFN NVTFS015N04CTAG