DiodesZetex DMN Type N-Channel MOSFET, 4.6 A, 30 V Enhancement, 3-Pin X4-DSN DMN3061LCA3-7
- RS-stocknr.:
- 222-2838
- Fabrikantnummer:
- DMN3061LCA3-7
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 25 eenheden)*
€ 6,35
(excl. BTW)
€ 7,675
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 15 september 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 475 | € 0,254 | € 6,35 |
| 500 - 975 | € 0,191 | € 4,78 |
| 1000 - 2475 | € 0,187 | € 4,68 |
| 2500 - 4975 | € 0,182 | € 4,55 |
| 5000 + | € 0,177 | € 4,43 |
*prijsindicatie
- RS-stocknr.:
- 222-2838
- Fabrikantnummer:
- DMN3061LCA3-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | X4-DSN | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 58mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.4nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 1.88W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.04mm | |
| Height | 0.22mm | |
| Length | 0.64mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type X4-DSN | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 58mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.4nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 1.88W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.04mm | ||
Height 0.22mm | ||
Length 0.64mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to minimize the footprint in handheld and mobile application. It can be used to replace many small signals MOSFET with as really small footprint.
Low Qg & Qgd
Small Footprint
Low Profile 0.20mm Height
Totally Lead-Free & Fully RoHS Compliant
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