DiodesZetex Dual DMT Type N-Channel MOSFET, 10.6 A, 30 V Enhancement, 8-Pin VDFN-3030 DMT3009UDT-7
- RS-stocknr.:
- 222-2868
- Fabrikantnummer:
- DMT3009UDT-7
- Fabrikant:
- DiodesZetex
Informatie over voorraden is momenteel niet toegankelijk
- RS-stocknr.:
- 222-2868
- Fabrikantnummer:
- DMT3009UDT-7
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMT | |
| Package Type | VDFN-3030 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.011Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 14.6nC | |
| Maximum Power Dissipation Pd | 16W | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q100, AEC-Q101, AEC-Q200 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMT | ||
Package Type VDFN-3030 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.011Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 14.6nC | ||
Maximum Power Dissipation Pd 16W | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q200 | ||
The DiodesZetex Dual n-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Ultra Low Gate Threshold Voltage
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
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