Infineon Dual HEXFET 1 N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SO-8 AUIRF7103QTR

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€ 13,03

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€ 15,77

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10 - 90€ 1,303€ 13,03
100 - 240€ 1,238€ 12,38
250 - 490€ 1,187€ 11,87
500 - 990€ 1,133€ 11,33
1000 +€ 1,056€ 10,56

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Verpakkingsopties
RS-stocknr.:
222-4608
Fabrikantnummer:
AUIRF7103QTR
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

50V

Package Type

SO-8

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

130mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

10nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Transistor Configuration

Dual

Maximum Operating Temperature

175°C

Height

1.5mm

Width

4mm

Length

5mm

Standards/Approvals

No

Number of Elements per Chip

1

Automotive Standard

AEC-Q101

The Infineon design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Advanced Planar Technology

Dual N Channel MOSFET Low On-Resistance

Logic Level Gate Drive

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