Infineon OptiMOS-TM5 Type N-Channel MOSFET, 60 A, 100 V Enhancement, 8-Pin TDSON BSC098N10NS5ATMA1

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Verpakkingsopties
RS-stocknr.:
222-4622
Fabrikantnummer:
BSC098N10NS5ATMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

100V

Package Type

TDSON

Series

OptiMOS-TM5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9.8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

22nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

69W

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

5.35mm

Height

1.2mm

Standards/Approvals

No

Width

6.1 mm

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Pb-free lead plating; RoHS compliant

Superior thermal resistance 100% avalanche tested

Halogen-free according to IEC61249-2-23

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