Infineon IPB65R Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-263 IPB60R180P7ATMA1
- RS-stocknr.:
- 222-4895
- Fabrikantnummer:
- IPB60R180P7ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 12,11
(excl. BTW)
€ 14,655
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 925 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,422 | € 12,11 |
| 50 - 120 | € 2,154 | € 10,77 |
| 125 - 245 | € 2,01 | € 10,05 |
| 250 - 495 | € 1,866 | € 9,33 |
| 500 + | € 1,744 | € 8,72 |
*prijsindicatie
- RS-stocknr.:
- 222-4895
- Fabrikantnummer:
- IPB60R180P7ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPB65R | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPB65R | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
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