ROHM Dual 2 Type P-Channel MOSFET, 3.5 A, 60 V Enhancement, 8-Pin TSMT QH8JC5TCR
- RS-stocknr.:
- 223-6207
- Fabrikantnummer:
- QH8JC5TCR
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 6,65
(excl. BTW)
€ 8,05
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 18 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 40 | € 0,665 | € 6,65 |
| 50 - 90 | € 0,653 | € 6,53 |
| 100 - 240 | € 0,493 | € 4,93 |
| 250 - 990 | € 0,485 | € 4,85 |
| 1000 + | € 0,39 | € 3,90 |
*prijsindicatie
- RS-stocknr.:
- 223-6207
- Fabrikantnummer:
- QH8JC5TCR
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TSMT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.91Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17.3nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.5W | |
| Forward Voltage Vf | -1.2V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.85mm | |
| Length | 3.3mm | |
| Standards/Approvals | No | |
| Width | 2.8 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TSMT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.91Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17.3nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.5W | ||
Forward Voltage Vf -1.2V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Height 0.85mm | ||
Length 3.3mm | ||
Standards/Approvals No | ||
Width 2.8 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM power MOSFET has TO-3PF package type. It is mainly used for switching.
Fast reverse recovery time (trr)
Low on-resistance
Fast switching speed
Drive circuits can be simple
Pb-free plating, RoHS compliant
Gerelateerde Links
- ROHM Dual P-Channel MOSFET 60 V, 8-Pin TSMT-8 QH8JC5TCR
- ROHM QH8MC5 Dual N/P-Channel MOSFET 3.5 A 8-Pin TSMT-8 QH8MC5TCR
- ROHM P-Channel MOSFET 60 V, 6-Pin TSMT-8 RQ6L035ATTCR
- ROHM P-Channel MOSFET 60 V, 8-Pin TSMT-8 RQ7L050ATTCR
- ROHM Dual P-Channel MOSFET 40 V, 8-Pin TSMT-8 QH8JB5TCR
- ROHM QH8KC5 Dual N-Channel MOSFET 60 V, 8-Pin TSMT-8 QH8KC5TCR
- ROHM QH8KC6 Dual N-Channel MOSFET 60 V, 8-Pin TSMT-8 QH8KC6TCR
- ROHM QH8MB5 Dual N/P-Channel MOSFET 5 A 8-Pin TSMT-8 QH8MB5TCR
