STMicroelectronics MDmesh DM6 Type N-Channel MOSFET, 72 A, 650 V Enhancement, 3-Pin TO-247
- RS-stocknr.:
- 225-0679P
- Fabrikantnummer:
- STWA68N65DM6AG
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal 10 eenheden (geleverd in een buis)*
€ 69,20
(excl. BTW)
€ 83,70
(incl. BTW)
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Aantal stuks | Per stuk |
|---|---|
| 10 - 99 | € 6,92 |
| 100 - 249 | € 6,84 |
| 250 - 499 | € 6,76 |
| 500 + | € 6,67 |
*prijsindicatie
- RS-stocknr.:
- 225-0679P
- Fabrikantnummer:
- STWA68N65DM6AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 72A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | MDmesh DM6 | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 39mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 480W | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 118nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.1mm | |
| Length | 40.92mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 72A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series MDmesh DM6 | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 39mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 480W | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 118nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 5.1mm | ||
Length 40.92mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
629