Vishay N-Channel 60 V Type N-Channel MOSFET, 602 A, 60 V, 4-Pin PowerPAK (8x8L) SQJQ160E-T1_GE3
- RS-stocknr.:
- 225-9968
- Fabrikantnummer:
- SQJQ160E-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 20,21
(excl. BTW)
€ 24,455
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 635 stuk(s) vanaf 01 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 4,042 | € 20,21 |
| 50 - 120 | € 3,638 | € 18,19 |
| 125 - 245 | € 3,194 | € 15,97 |
| 250 - 495 | € 2,95 | € 14,75 |
| 500 + | € 2,144 | € 10,72 |
*prijsindicatie
- RS-stocknr.:
- 225-9968
- Fabrikantnummer:
- SQJQ160E-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 602A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK (8x8L) | |
| Series | N-Channel 60 V | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.8mΩ | |
| Typical Gate Charge Qg @ Vgs | 183nC | |
| Maximum Power Dissipation Pd | 600W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.7V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.7mm | |
| Width | 8 mm | |
| Length | 8.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 602A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK (8x8L) | ||
Series N-Channel 60 V | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.8mΩ | ||
Typical Gate Charge Qg @ Vgs 183nC | ||
Maximum Power Dissipation Pd 600W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.7V | ||
Maximum Operating Temperature 175°C | ||
Height 1.7mm | ||
Width 8 mm | ||
Length 8.1mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
AEC-Q101 qualified
100 % Rg and UIS tested
Thin 1.6 mm package
Very low thermal resistance
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