Infineon IPP Type P-Channel MOSFET, 120 A, 40 V Enhancement, 3-Pin TO-220 IPP120P04P4L03AKSA2
- RS-stocknr.:
- 229-1847
- Fabrikantnummer:
- IPP120P04P4L03AKSA2
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 17,62
(excl. BTW)
€ 21,32
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending 500 stuk(s) vanaf 15 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 3,524 | € 17,62 |
| 25 - 45 | € 3,138 | € 15,69 |
| 50 - 120 | € 2,926 | € 14,63 |
| 125 - 245 | € 2,716 | € 13,58 |
| 250 + | € 2,502 | € 12,51 |
*prijsindicatie
- RS-stocknr.:
- 229-1847
- Fabrikantnummer:
- IPP120P04P4L03AKSA2
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPP | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 136W | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Forward Voltage Vf | -1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.54mm | |
| Length | 15.65mm | |
| Width | 15.95 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPP | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 136W | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Forward Voltage Vf -1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Maximum Operating Temperature 175°C | ||
Height 2.54mm | ||
Length 15.65mm | ||
Width 15.95 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC | ||
Infineon Series IPP MOSFET, 120A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IPP120P04P4L03AKSA2
This silicon MOSFET is designed for high performance within various applications. The component features a TO-220 package that enhances its capability for effective thermal dissipation. With a maximum continuous drain current of 120A and a drain-source voltage of 40V, it offers excellent operational flexibility in demanding environments. The MOSFET operates efficiently across a wide temperature range, making it suitable for automotive and industrial applications.
Features & Benefits
• P-channel enhancement mode ensures efficient switching performance
• AEC qualified, meeting rigorous automotive standards
• Maximum operating temperature of +175°C allows for demanding requirement
• MSL1 rating supports high-temperature reflow processes
Applications
• Used in automotive control systems for efficient power management
• Effective for electric motor drive in robotics
• Incorporated into power supply circuits in industrial machinery
• Suitable for consumer electronics where compact size is essential
What is the significance of the maximum continuous drain current rating?
The maximum continuous drain current rating indicates the highest amount of current the device can handle under normal operating conditions, which is essential for ensuring reliability in applications demanding high current capacity.
How does the low Rds(on) contribute to power efficiency?
A low Rds(on) reduces power losses during operation, allowing devices to run cooler and enhancing overall system energy efficiency, which is particularly beneficial in battery-operated designs.
What safety features does this component offer for harsh environments?
This device is 100% avalanche tested, ensuring it can withstand transient conditions without failure, which is crucial for protecting circuits in unpredictable environments such as automotive and industrial applications.
What performance characteristics should one consider when integrating this component into existing systems?
Key characteristics like gate threshold voltage, maximum gate-source voltage, and thermal resistance should be evaluated to ensure compatibility with existing circuit designs and to optimise performance.
How does the operating temperature range enhance its usability in different applications?
With an operating temperature range from -55°C to +175°C, this MOSFET is versatile enough for use across a broad spectrum of applications, from extreme cold environments to high-temperature operational settings.
Gerelateerde Links
- Infineon IPP Silicon P-Channel MOSFET 40 V, 3-Pin TO-220 IPP120P04P4L03AKSA2
- Infineon OptiMOS P P-Channel MOSFET 40 V, 3-Pin TO-220 IPP120P04P4L03AKSA1
- Infineon IPB Silicon P-Channel MOSFET 40 V, 3-Pin D2PAK IPB120P04P4L03ATMA2
- Infineon IPP N-Channel MOSFET Transistor 600 V, 3-Pin TO-220 IPP60R040S7XKSA1
- Infineon CoolMOS™ Silicon N-Channel MOSFET 80 V, 3-Pin TO-220 IPP020N08N5AKSA1
- Infineon CoolMOS™ Silicon N-Channel MOSFET 100 V, 3-Pin TO-220 IPP030N10N5AKSA1
- Infineon OptiMOS P P-Channel MOSFET 40 V, 3-Pin D2PAK IPB120P04P4L03ATMA1
- Infineon HEXFET N-Channel MOSFET 40 V TO-220 IRFB7440PBF
