onsemi SUPERFET III Type N-Channel MOSFET, 10 A, 650 V N, 3-Pin TO-252

RS-stocknr.:: 229-6452
Fabrikantnummer:: NTD360N65S3H
Fabrikant:: onsemi

onsemi SUPERFET III Type N-Channel MOSFET, 10 A, 650 V N, 3-Pin TO-252

Subtotaal (1 rol van 2500 eenheden)*

€ 2.455,00

(excl. BTW)

€ 2.970,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Op voorraad

Plus verzending 12.500 stuk(s) vanaf 29 december 2025

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
2500 +	€ 0,982	€ 2.455,00

*prijsindicatie

RS-stocknr.:: 229-6452
Fabrikantnummer:: NTD360N65S3H
Fabrikant:: onsemi

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	650V
	Series	SUPERFET III
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	360mΩ
	Channel Mode	N
	Maximum Power Dissipation Pd	83W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	17.5nC
	Maximum Gate Source Voltage Vgs	30 V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Length	6.73mm
	Standards/Approvals	No
	Width	2.39 mm
	Height	6.22mm
	Automotive Standard	No

	Alles selecteren
	Merk onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 650V
	Series SUPERFET III
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 360mΩ
	Channel Mode N
	Maximum Power Dissipation Pd 83W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 17.5nC
	Maximum Gate Source Voltage Vgs 30 V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Length 6.73mm
	Standards/Approvals No
	Width 2.39 mm
	Height 6.22mm
	Automotive Standard No

Datasheet - NTD360N65S3H

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 10 A, 360 mΩ, DPAK

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III FAST MOSFET series helps minimize various power systems and improve system efficiency.

Features

• 700 V @ TJ = 150°C

• Ultra Low Gate Charge (Typ. Qg = 17.5 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 180 pF)

• Fast switching performance with robust body diode

• 100% Avalanche Tested

• RoHS Compliant

• Typ. RDS(on) = 296 m

• Internal Gate Resistance: 0.9

onsemi SUPERFET III Type N-Channel MOSFET, 10 A, 650 V N, 3-Pin TO-252

GRATIS bezorging voor bestellingen van meer dan € 75,00

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 10 A, 360 mΩ, DPAK

Features

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