STMicroelectronics SCTW Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 4-Pin Hip-247
- RS-stocknr.:
- 230-0094P
- Fabrikantnummer:
- SCTWA60N120G2-4
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal 2 eenheden (geleverd in een buis)*
€ 50,26
(excl. BTW)
€ 60,82
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 12 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 2 - 4 | € 25,13 |
| 5 + | € 24,50 |
*prijsindicatie
- RS-stocknr.:
- 230-0094P
- Fabrikantnummer:
- SCTWA60N120G2-4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Series | SCTW | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 3V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 388W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 5.1 mm | |
| Height | 21.1mm | |
| Length | 15.9mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Series SCTW | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 3V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 388W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 5.1 mm | ||
Height 21.1mm | ||
Length 15.9mm | ||
Automotive Standard No | ||
The STMicroelectronics SCTWA60N is silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency