Infineon CoolSiC Type N-Channel MOSFET, 35 A, 650 V Enhancement, 4-Pin TO-247
- RS-stocknr.:
- 232-0409
- Fabrikantnummer:
- IMZA65R057M1HXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 30 eenheden)*
€ 151,95
(excl. BTW)
€ 183,87
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 240 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 30 | € 5,065 | € 151,95 |
| 60 - 60 | € 4,812 | € 144,36 |
| 90 + | € 4,508 | € 135,24 |
*prijsindicatie
- RS-stocknr.:
- 232-0409
- Fabrikantnummer:
- IMZA65R057M1HXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 74mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 74mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon has SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package. The CoolSiC MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device’s performance, robustness, and ease of use. The MOSFET 650V is built on a state-of-the-art trench semiconductor, optimized to allow no compromises in getting both the lowest losses in the application and the highest reliability in operation.
Low capacitances
Optimized switching behaviour at higher currents
Superior gate oxide reliability
Excellent thermal behaviour
Increased avalanche capability
Works with standard drivers
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