Infineon BSC Type N-Channel MOSFET, 114 A, 150 V N, 8-Pin SuperSO8 5 x 6 BSC074N15NS5ATMA1
- RS-stocknr.:
- 234-6989
- Fabrikantnummer:
- BSC074N15NS5ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 10,36
(excl. BTW)
€ 12,54
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 5,18 | € 10,36 |
| 10 - 18 | € 4,565 | € 9,13 |
| 20 - 48 | € 4,25 | € 8,50 |
| 50 - 98 | € 3,995 | € 7,99 |
| 100 + | € 3,68 | € 7,36 |
*prijsindicatie
- RS-stocknr.:
- 234-6989
- Fabrikantnummer:
- BSC074N15NS5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 114A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | BSC | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.2mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 46W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.2mm | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Length | 5.35mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 114A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series BSC | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.2mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 46W | ||
Maximum Operating Temperature 150°C | ||
Height 1.2mm | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Length 5.35mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ N- channel MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. The low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort. It has 114A maximum continuous drain current and 150V maximum drain source voltage. It is Ideal for high-frequency switching and synchronous rectification.
Lowest RDS(on) enables highest power density and efficiency
Higher operating temperature rating to 175°C for increased reliability
Low RthJC for excellent thermal behaviour
Lower reverse recovery charge (Qrr)
Very low on-resistance RDS(on)
Very low reverse recovery charge(Qrr)
Pb-free lead plating
RoHS compliant
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