Infineon OptiMOS™ N-Channel MOSFET, 479 A, 25 V, 8-Pin TDSON BSC004NE2LS5ATMA1

RS-stocknr.:: 236-3641
Fabrikantnummer:: BSC004NE2LS5ATMA1
Fabrikant:: Infineon

Infineon OptiMOS™ N-Channel MOSFET, 479 A, 25 V, 8-Pin TDSON BSC004NE2LS5ATMA1

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RS-stocknr.:: 236-3641
Fabrikantnummer:: BSC004NE2LS5ATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	479A
	Maximum Drain Source Voltage Vds	25V
	Series	OptiMOS™
	Package Type	TDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.45mΩ
	Typical Gate Charge Qg @ Vgs	135nC
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	188W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	6.35mm
	Length	5.49mm
	Height	1.1mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 479A
	Maximum Drain Source Voltage Vds 25V
	Series OptiMOS™
	Package Type TDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.45mΩ
	Typical Gate Charge Qg @ Vgs 135nC
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 188W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 6.35mm
	Length 5.49mm
	Height 1.1mm
	Automotive Standard No

Datasheet - BSC004NE2LS5ATMA1

Infineon OptiMOS™ Series MOSFET, 25V Maximum Drain Source Voltage, 479A Maximum Continuous Drain Current - BSC004NE2LS5ATMA1

This MOSFET is a high-current N-channel semiconductor designed for surface-mount power switching in demanding thermal environments. It operates across an extended temperature range and is intended for applications requiring substantial continuous drain current and low conduction losses while mounted in a TDSON package.

Features and Benefits:

• 479A continuous drain current reduces conduction constraints for high loads
• 0.45mΩ maximum RDS(on) lowers on-state energy dissipation
• 25V maximum drain-source voltage permits low-voltage power stages
• 188W maximum power dissipation supports elevated thermal loading
• 135nC typical gate charge enables controlled switching for gate-drive design
• 20V maximum gate-source voltage allows robust gate-drive margins

Applications

• Suitable for high-current DC power distribution modules
• Ideal for synchronous rectification in low-voltage converters
• Used with motor inverter stages requiring high Peak currents
• Can be used for battery management and high-power cells
• Used for power stages in telecommunications rectifiers

What ambient temperatures can it withstand?

It is specified to operate from −55°C up to 175°C.

What package and mounting style does it use?

It is supplied in a TDSON package for surface mounting.

How does its gate-drive requirement affect design?

The 135nC gate charge requires a driver sized for higher charge transfer to meet desired switching speed and losses.

What polarity of channel does it employ and how does that affect usage?

It uses an N-channel topology, which is suited to low-side switching and synchronous rectifier configurations.

What voltage and current limits should be observed during design?

Design should respect a maximum drain-source voltage of 25V and a maximum continuous drain current of 479A.