Infineon OptiMOS™ Type N-Channel MOSFET, 433 A, 30 V, 8-Pin TDSON BSC005N03LS5IATMA1
- RS-stocknr.:
- 236-3645
- Fabrikantnummer:
- BSC005N03LS5IATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 12,55
(excl. BTW)
€ 15,20
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 4.965 stuk(s) vanaf 29 december 2025
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,51 | € 12,55 |
| 50 - 120 | € 2,26 | € 11,30 |
| 125 - 245 | € 2,134 | € 10,67 |
| 250 - 495 | € 1,982 | € 9,91 |
| 500 + | € 1,832 | € 9,16 |
*prijsindicatie
- RS-stocknr.:
- 236-3645
- Fabrikantnummer:
- BSC005N03LS5IATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 433A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS™ | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.5mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Power Dissipation Pd | 188W | |
| Forward Voltage Vf | 0.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Length | 5.49mm | |
| Width | 6.35 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 433A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS™ | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.5mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Power Dissipation Pd 188W | ||
Forward Voltage Vf 0.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Length 5.49mm | ||
Width 6.35 mm | ||
Automotive Standard No | ||
The Infineon OptiMOS power MOSFET offers Benchmark solutions by enabling highest power density and energy efficiency, both in stand by and full operation. It offers drain source on-state resistance of 0.55 m Ohm.
Highest efficiency
Highest power density in SuperSO8 package
Reduction of overall system costs
RoHS compliant
Halogen free
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