Microchip TN5325 Type N-Channel MOSFET, 10.3 A, 650 V Enhancement, 3-Pin TO-92
- RS-stocknr.:
- 239-5617
- Fabrikantnummer:
- TN5325K1-G
- Fabrikant:
- Microchip
Subtotaal (1 tray van 3000 eenheden)*
€ 1.368,00
(excl. BTW)
€ 1.656,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 16 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 3000 + | € 0,456 | € 1.368,00 |
*prijsindicatie
- RS-stocknr.:
- 239-5617
- Fabrikantnummer:
- TN5325K1-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10.3A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-92 | |
| Series | TN5325 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 140W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10.3A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-92 | ||
Series TN5325 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 140W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip TN5325 series of low-threshold, enhancement-mode (normally-off) transistor utilize a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Low threshold of maximum 2V
High input impedance and high gain
Rise Time of 15 ns
Turn-off Delay Time of 25 ns
Fall Time of 25 ns
Gerelateerde Links
- Microchip TN5325 Silicon N-Channel MOSFET 250 V, 3-Pin TO-92 TN5325K1-G
- Microchip TN5325 Silicon N-Channel MOSFET 250 V, 3-Pin TO-92 TN5325N3-G
- Microchip VN2460 Silicon N-Channel MOSFET 600 V, 3-Pin TO-92 VN2460N3-G
- Microchip DN2540 Silicon N-Channel MOSFET 400 V Depletion, 3-Pin TO-92 DN2540N3-G-P003
- Microchip VP2206 Silicon P-Channel MOSFET 60 V, 3-Pin TO-92 VP2206N3-G
- Microchip VN0550 Silicon N-Channel MOSFET 500 V, 3-Pin TO-92 VN0550N3-G
- Microchip VP0550 Silicon P-Channel MOSFET 500 V, 3-Pin TO-92 VP0550N3-G
- Microchip LP0701 Silicon P-Channel MOSFET 16.5 V, 3-Pin TO-92 LP0701N3-G